SIMS impurity measurement - List of Manufacturers, Suppliers, Companies and Products | IPROS GMS

[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Silicon Using SIMS

We will enhance the sensitivity and evaluate the concentration distribution at the ppt level.

The detection sensitivity in SIMS analysis depends on the amount of sputtered sample per unit time. Depending on the element, significantly improved sensitivity can be achieved by limiting the impurities to one element, allowing evaluation down to ppt (parts per trillion) levels of less than 5E13 atoms/cm3, which is effective for assessing low-concentration impurities in IGBT devices and high-purity wafers. This document presents examples of ultra-high sensitivity evaluations of low-concentration impurities in silicon.